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Lifetime Tester (WT) systems are advanced and versatile measurement platforms designed to perform a wide range of material characterization tasks, including carrier lifetime measurement, resistivity mapping, metal contamination detection, and other critical semiconductor property evaluations. These systems combine multiple measurement techniques and come with all accessories necessary for mapping, to deliver comprehensive wafer analysis for both research and industrial applications.
Each system can be configured based on the user’s requirements by adding measurement capabilities and automation capabilities described below. Get in touch and find your perfect WT-2000 configuration!
WT-2000 Wafer Tester
Author: T. Pavelka, Z. Batari
Topic: lifetime; SOI; EPI
Author: András Bojtor, Dávid Krisztián, Gábor Paráda, Ferenc Korsós, Sándor Kollarics, Gábor Csősz, Bence G. Márkus, László Forró, Ferenc Simon
Topic: uPCD
Author: H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka
Topic: Silicon (Si); elemental semiconductors; carrier lifetime; photoconductivity
Author: H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka
Topic: carrier lifetime; Silicon (Si); high power device
Author: J.D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster
Topic: carrier lifetime; silicon carbide (SiC); epilayer
Author: D. Krisztián, F. Korsós, I. Saegh, G. Paráda, P. Tüttő, X. Dong and H. Deng, S. Wang, X. Chen
Topic: carrier lifetime; Ingot; Monocrystalline; recombination; Silicon (Si); E-PCD CARRIER LIFETIME FOR MONO-S
Author: Y. Ma, Y. Gu, Y. Zhang, X. Chen, S. Xi, Z. Boldizsár, L. Huang, L. Zhou
Topic: Carrier scattering; relaxation dynamics; In0.83Ga0.17As
Author: Nucl. Inst. Meth. B127-128, 388-392
Topic: carrier lifetime; Silicon (Si); Ion Implantation
Author: N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai
Topic: Charge Carrier Lifetime; Excess Charge Pocket; Ion Implantation; Lifetime Tailoring; Microwave Photoconductive Decay (μ-PCD); Radiation Damage; Recombination Activity
Author: E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei
Topic: diffusion; eddy current testing; Electrical resistivity; elemental semiconductors; phosphorus; quality control; Silicon (Si); solar cells; surface photovoltage
Author: Z. Tóth, A. Gárdián, M. Füle, J. Csontos, F. Korsós, P. Basa
Topic: Laser Processing; Silicon (Si); Texturisation
Author: Ferenc Korsós, Géza László, Péter Tüttő, Sebastien Dubois, Nicolas Enjalbert, Krisztián Kis-Szabó, Attila Tóth
Topic: Characterisation; inversion layer sheet resistance; junction photovoltage technique; Non-contact; PV; SHEET RESISTANCE MEASUREMENT
Author: J-L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Mészáros, K. Kis-Szabó, T. Pavelka
Topic: Dielectrics; Carrier mobility; Charge carriers; Dielectric thin films; Metrology
Author: D.K. Schröder
Topic: Silicon (Si); Electric measurements; Metal–insulator–semiconductor structures; Surface and interface states; Contact potential; Work function; Epitaxial silicon
Author: Gergely Havasi, Dávid Krisztián, (Zs. Gombás -BME-, Z. Ádám -EcoSolifer Heterojunction Ltd.), Ferenc Korsós
Topic: laser controlled photoconductance decay (PCD)
Author: J.E. Steinle
Author: J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don
Topic: corona charge; in-line; traps
Author: M. Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen
Topic: recombination of copper; Microwave Photoconductive Decay (μ-PCD); high-intensity bias light; interstitial copper; Ham's kinetics; Si–SiO2 interface
Author: H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim
Topic: metallic impurities distribution; etching technique; ET-AAS
Author: J. Govaerts, S.N. Granata, T. Bearda, F. Dross, C. Boulord, G. Beaucarne, F. Korsós, K. Baert, I. Gordon, J. Poortmans
Topic: PECVD; Heterojunction; Silicone bonding; Module-level processing
Author: L. Köster, P. Blöchl, L. Fábry
Topic: element specific drive-in treatments; Microwave Photoconductive Decay (μ-PCD); metal contamination; injection level; Schockley-Read-Hall-recombination model
Author: C. Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif
Topic: pre-gate cleaning; particle removal; metal removal; surface microroughness; surface passivation
Author: J.E. Steinle
Author: S. Dauwe, L. Mittelstadt, A. Lawerenz, H.J. Freitag,C. Beneking, H. Aulich
Topic: Fourier transform infrared spectroscopy; Microwave-induced photoconductance decay; Light beam induced current mapping; Spectral Response
Author: M. Yli-Koski, J. Mellin, V. Ovchinnikov
Topic: Gettering; Phosphorous Ion Implantation; Silicon (Si); surface photovoltage
Author: T.S. Horányi, P. Tüttő, Cs. Kovacsics
Topic: oxidation; Silicon (Si); temperature; nitrogen compounds; oxygen compounds; quartz; surface treatment
Author: E. Rosseel, A. Hikavyy, J-L. Everaert, L. Witters, J. Mitard, T. Hoffmann, W. Vandervorst, A. Pap, T. Pavelka
Topic: Ge-Si alloys; X-ray diffraction; elemental semiconductors; laser beam annealing; semiconductor epitaxial layers; semiconductor junctions; Silicon (Si)
Author: Gergely Havasi, Dávid Krisztián, Ferenc Korsós, Shaoyong Fu
Topic: laser controlled photoconductance decay (PCD)
Author: Dávid Krisztián*, Ferenc Korsós, Ilias Saegh, Gábor Paráda, Martin Kovács, Zita Verdon, Csaba Jobbágy, Péter Tüttö, Xueqian Dong, Hao Deng, Shasha Wang and Xiaobo Chen
Topic: carrier lifetime; eddy current testing; photoconductive decay; E-PCD CARRIER LIFETIME FOR MONO-Si
Author: Sara Bakhshi, Ngwe Zin, Kristopher O Davis, Marshall Wilson, Ismail Kashkoush, Winston V Schoenfeld
Topic: aluminium compounds; aluminum oxide; carrier lifetime; passivation; photovoltaic cells; Silicon (Si); Silicon Nitride; surface passivation
Author: T.S. Horányi, T. Pavelka, P. Tüttő
Topic: lifetime; Silicon (Si); passivated surface
Author: G. Ferenczi, T. Pavelka, P. Tüttő
Topic: contamination analysis; Silicon (Si)
Author: Dávid Krisztián; Ferenc Korsós; Enikő Kis; Gábor Paráda; Péter Tüttő
Topic: carrier lifetime; lifetime measurements; photoconductive decay; solar cells
Author: G. Ferenczi, T. Pavelka, P. Tüttő, L. Köster
Topic: recombination; Ti donor; Silicon (Si)
Author: F. Korsós, A. Jász
Topic: Microwave Photoconductive Decay (μ-PCD); photoconductive decay; surface recombination
Author: H.S. Radhakrishnan, M. Debucquoy, F. Korsós, K. Van Nieuwenhuysen, V. Depauw, I. Gordon, R. Mertens, J. Poortmans
Topic: epilayer; bulk lifetime; porous silicon; surface recombination velocity; Microwave Photoconductive Decay (μ-PCD); QSSPC; PL; PC1D
Author: M. Bail, J. Kentsch, R. Brendel, M. Schulz
Topic: carrier lifetime; infrared camera
Author: M.B.I. Diaz, C. Haessler
Topic: μ-PCD; etch pit density (EPD) mapping; resistivity topography
Author: J. Lossen, L. Mittelstadt, S. Dauwe, K. Lauer, C. Beneking
Topic: carrier lifetime; POCl3; diffusion
Author: M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
Topic: Copper (Cu); Silicon (Si); surface photovoltage; Microwave Photoconductive Decay (μ-PCD)
Author: J.D. Caldwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub
Topic: silicon carbide (SiC); photoconductive decay; epitaxial layer
Author: András Bojtor, Dávid Krisztián, Ferenc Korsós, Sándor Kollarics, Gábor Paráda, Thomas Pinel, Márton Kollár, Endre Horváth, Xavier Mettan, Hidetsugu Shiozawa, Bence G. Márkus, László Forró, Ferenc Simon
Topic: carrier density; carrier lifetime; Carrier mobility; Charge Carrier Lifetime; Charge carriers; photovoltaics; PV; recombination; Charge carrier density; PDL Hall
Author: D. Krisztián, F. Korsós, M. Kovács, F. Ujhelyi, P. Tüttö
Topic: depth profile; eddy current testing; photovoltaic cells; PV; silicon solar cells; solar cells; EU PVSEC; EU PVSEC; European Photovoltaic Solar Energy Conference and Exhibition; Silicon PV; Semilab to present paper at Silicon PV; Silicon
Author: J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch
Topic: HfSiO; Nitridation; corona charge; Gate dielectric; Gate leakage
Author: T. Pavelka
Author: F. Korsós, G. Paráda, D. Fátay
Topic: Wafer-Based Silicon Solar Cells; Silicon Feedstock; Crystallisation; Wafering; Microwave Photoconductive Decay (μ-PCD); carrier lifetime
Author: J.E. Steinle
Author: T. Pavelka, D.C. Gupta and G.A. Brown
Topic: Silicon (Si); epitaxial wafer; carrier lifetime; surface/interface recombination velocity
Author: H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
Topic: Copper (Cu); illumination; precipitation; Silicon (Si); annealing
Author: A.R. Peaker, V.P. Markevich, B. Hamilton, G. Parada, A. Dudás, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon, G. Rozgonyi
Topic: Laplace deep level transient spectroscopy; minority carrier lifetime; passivation; recombination; silicon solar cells; transition metals
Author: D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton
Topic: MOS capacitors; carrier lifetime; electron-hole recombination; semiconductor device measurement; semiconductor epitaxial layers; Silicon (Si); space-charge limited conduction
Author: Dávid Krisztián, Ferenc Korsós, Gergely Havasi
Topic: carrier lifetime; Carrier mobility; Charge carriers; concentration profile; lifetime measurements; photoconductive decay; silicon solar cells
Author: H. Takato, I. Sakata, R. Shimokawa
Topic: surface passivation; quinhydrone/ethanol treatment; Microwave Photoconductive Decay (μ-PCD)
Author: A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka
Author: G. Paráda, F. Korsós, P. Tüttő
Topic: carrier lifetime; Monocrystalline; Ingot
Author: A. Danel, F. Tardif, G. Kamarinos, M.C. Nguyen
Topic: high purity silicon; Surface Charge Profiler (SCP); Doping measurements
WT-2000 Wafer Tester
