Mercury Probe SystemResistivity Measurement

MCV-530 (L) Mercury Probe System

The MCV-530 series utilizes proprietary Mercury Capacitance-Voltage technology for non-destructive, high-precision characterization of dielectrics and epitaxial semiconductor layers. Trusted globally by leading semiconductor manufacturers and R&D centers, it provides reliable resistivity profiling, dielectric characterization, and interface analysis.

Related Publications

ECS Journal of Solid State Science and Technology (2021) Volume 10, Number 72021

Assessment of Surface Preparation Methods for Mercury (Hg) Probe Schottky Capacitance-Voltage (MCV) on Epitaxial Silicon

Author: Cristina Sanna, Patrick Taylor, Robert Hillard, Samuel Frey, Dan McDonald, Jonny Hoglund, Gyula Zsakai, Attila Marton and Peter Horvath

Topic: Epitaxial silicon; mercury probe; surface treatment; MERCURY C-V PROFILING; Capacitance-voltage characteristics; p-type; pre-treatment chamber

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physica status solidi (a) - applications and materials science2022

Characterization of AlXGa1-XAs/GaN High Electron Mobility Transistor (HEMT) Structures with Mercury Probe Capacitance-Voltage and Current-Voltage

Author: Eric Tucker,Frank Ramos,Samuel Frey,Robert J. Hillard,Péter Horváth,Gyula Zsákai,Attila Márton

Topic: Hg CV

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physica status solidi (a) - applications and materials science2022

Characterization of AlXGa1−XN/GaN High Electron Mobility Transistor Structures with Mercury Probe Capacitance–Voltage and Current–Voltage

Author: Eric Tucker, Frank Ramos, Samuel Frey, Robert J. Hillard, Péter Horváth, Gyula Zsákai, Attila Márton

Topic: dielectric characterization; dielectric charge; MERCURY C-V PROFILING; 2DEG sheet charge; pinch-off voltage; mercury gate

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MCV-530 (L) Mercury Probe System

Related Whitepapers

September 23, 2025

MCV-530 (L) Mercury Probe System

Related Publications

Assessment of Surface Preparation Methods for Mercury (Hg) Probe Schottky Capacitance-Voltage (MCV) on Epitaxial Silicon

Characterization of AlXGa1-XAs/GaN High Electron Mobility Transistor (HEMT) Structures with Mercury Probe Capacitance-Voltage and Current-Voltage

Characterization of AlXGa1−XN/GaN High Electron Mobility Transistor Structures with Mercury Probe Capacitance–Voltage and Current–Voltage

Related Whitepapers

From GaAs to SiC: Measuring Resistivity in Compound Semiconductors

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MCV-530 (L) Mercury Probe System

Related Publications

Assessment of Surface Preparation Methods for Mercury (Hg) Probe Schottky Capacitance-Voltage (MCV) on Epitaxial Silicon

Characterization of AlXGa1-XAs/GaN High Electron Mobility Transistor (HEMT) Structures with Mercury Probe Capacitance-Voltage and Current-Voltage

Characterization of AlXGa1−XN/GaN High Electron Mobility Transistor Structures with Mercury Probe Capacitance–Voltage and Current–Voltage

Related Whitepapers

From GaAs to SiC: Measuring Resistivity in Compound Semiconductors