Progress in Photovoltaics: Research and Applications2014
Extremely low surface recombination velocities on low‐resistivity n‐type and p‐type crystalline silicon using dynamically deposited remote plasma silicon nitride films
Author: Shubham Duttagupta, Fen Lin, Marshall Wilson, Matthew B Boreland, Bram Hoex, Armin G Aberle
Topic: corona-voltage metrology; Non-Contact Measurement; photovoltaics; silicon defect density; Silicon Nitride; surface passivation; surface recombination velocity
Read publication
