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This non-contact, non-destructive system is designed to characterize charge carrier mobility and sheet resistance of compound semiconductor wafers up to 200 mm in diameter. It combines RF reflectance with a permanent magnet for mobility measurement and Eddy Probe technology for sheet resistance analysis. With high throughput and full-wafermapping, it delivers uniformity analysis essential for semiconductor manufacturing and R&D.
Lehighton-2000M Sheet Resistance and Mobility Measurement
Author: Eric Tucker, Frank Ramos, Samuel Frey, Robert J. Hillard, Péter Horváth, Gyula Zsákai, Attila Márton
Topic: dielectric characterization; dielectric charge; MERCURY C-V PROFILING; 2DEG sheet charge; pinch-off voltage; mercury gate
Author: Ferenc Korsós, Géza László, Péter Tüttő, Sebastien Dubois, Nicolas Enjalbert, Krisztián Kis-Szabó, Attila Tóth
Topic: Characterisation; inversion layer sheet resistance; junction photovoltage technique; Non-contact; PV; SHEET RESISTANCE MEASUREMENT
Author: András Bojtor, Gábor Paráda, Péter Tüttő, Hajnalka Korka, Kinga Szőke, Ferenc Korsós
Topic: Hall effect measurements; photoconductivity; IGZO ELECTRICAL CHARACTERIZATION; PDL Hall
Author: Dávid Krisztián, Ferenc Korsós, Gergely Havasi
Topic: carrier lifetime; Carrier mobility; Charge carriers; concentration profile; lifetime measurements; photoconductive decay; silicon solar cells
